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NTR2101P
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise stated)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
Drain ? to ? Source Breakdown Voltage
Temperature Coefficient
V (BR)DSS
V (BR)DSS /T J
V GS = 0 V, I D = ? 250 m A
? 8.0
10
V
mV/ ° C
Zero Gate Voltage Drain Current
I DSS
V GS = 0 V,
V DS = ? 6.4 V
T J = 25 ° C
T J = 125 ° C
? 1.0
? 100
m A
Gate ? to ? Source Leakage Current
I GSS
V DS = 0 V, V GS = ± 8.0 V
± 100
nA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Negative Threshold
Temperature Coefficient
V GS(TH)
V GS(TH) /T J
V GS = V DS , I D = ? 250 m A
? 0.40
2.7
? 1.0
V
mV/ ° C
Drain ? to ? Source On Resistance
R DS(on)
V GS = ? 4.5 V, I D = ? 3.5 A
39
52
m W
V GS = ? 2.5 V, I D = ? 3.0 A
V GS = ? 1.8 V, I D = ? 2.0 A
52
79
72
120
Forward Transconductance
g FS
V GS = ? 5.0 V, I D = ? 3.5 A
9.0
S
CHARGES AND CAPACITANCES
Input Capacitance
C ISS
1173
pF
Output Capacitance
Reverse Transfer Capacitance
C OSS
C RSS
V GS = 0 V, f = 1.0 MHz,
V DS = ? 4.0 V
289
218
Total Gate Charge
Gate ? to ? Source Charge
Gate ? to ? Drain Charge
Q G(TOT)
Q GS
Q GD
V GS = ? 4.5 V, V DS = ? 4.0 V,
I D = ? 3.5 A
12
3.8
2.5
15
nC
SWITCHING CHARACTERISTICS (Note 3)
Turn ? On Delay Time
t d(on)
7.4
15
ns
Rise Time
Turn ? Off Delay Time
Fall Time
t r
t d(off)
t f
V GS = ? 4.5 V, V DD = ? 4.0 V,
I D = ? 1.2 A, R G = 6.0 W
15.75
38
31
25
58
51
DRAIN ? SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V SD
V GS = 0 V,
I S = ? 1.2 A
T J = 25 ° C
? 0.73
? 1.2
V
2. Pulse Test: pulse width ≤ 300 m s, duty cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
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